AON7820 20v dual n-channel mosfet v ds i s (at v gs =4.5v) 35a r ss(on) (at v gs =4.5v) < 16m w r ss(on) (at v gs =3.5v) < 17m w r ss(on) (at v gs =2.5v) < 20m w symbol the AON7820 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ss(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v top view s2 d2 g2 d1 s1 d1 d2 g1 g d s g d s symbol v ds v gs i sm t j , t stg symbol t 10s steady-state steady-state r q jc c thermal characteristics maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.2 75 4 units w power dissipation a p dsm w t a =70c 31 2 t a =25c power dissipation b p d v v maximum units parameter 12 gate-source voltage drain-source voltage 20 9 continuous drain current 80 pulsed drain current c continuous drain current i s 35 a t a =25c i ssm a 22 t c =25c t c =100c 11 t a =70c maximum junction-to-ambient a c/w r q ja 30 60 40 t c =25c 3.1 12.5 t c =100c parameter typ max junction and storage temperature range -55 to 150 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.4 0.7 1.0 v i d(on) 80 a 13 16 t j =125c 18.7 23 13.8 17 m w 15.6 20 m w g fs 65 s v sd 0.58 1 v i s 35 a c iss 1375 1720 2065 pf c oss 215 312 410 pf c rss 105 177 250 pf r g 2.65 kw q g 14 18.2 22 nc q gs 9.5 nc q gd 7.6 nc t d(on) 1.65 m s t 3.7 m s v gs =0v, v ds =10v, f=1mhz switching parameters v =4.5v, v =10v, r =0.9 w , gate resistance v gs =0v, v ds =0v, f=1mhz turn-on delaytime turn-on rise time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v ds =0v, v gs =10v zero gate voltage drain current gate-body leakage current v ds =v gs i d =250 m a v gs =4.5v, v ds =10v, i s =11a gate source charge gate drain charge output capacitance total gate charge dynamic parameters m w v ds =5v, i d =11a v gs =4.5v, i s =11a forward transconductance diode forward voltage i s =1a,v gs =0v v gs =3.5v, i s =10a r ss(on) static drain-source on-resistance reverse transfer capacitance v gs =2.5v, i s =9a maximum body-diode continuous current input capacitance t r 3.7 m s t d(off) 5.4 m s t f 10 m s t rr 11 14.5 18 ns q rr 17 21.5 26 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =11a, di/dt=500a/ m s body diode reverse recovery time v gs =4.5v, v ds =10v, r l =0.9 w , r gen =3 w turn-off fall time turn-on rise time turn-off delaytime body diode reverse recovery charge i f =11a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AON7820 20v dual n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 12 14 16 18 20 0 5 10 15 20 r ds(on) (m w w w w ) i s (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =9a v gs =3.5v i d =10a v gs =4.5v i d =11a 25 c 125 c v ds =5v v gs =4.5v 0 20 40 60 80 0 1 2 3 4 5 i s (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 2v 3.5v 4.5v v gs =2.5v v gs =3.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 15 20 25 30 35 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =11a 25 c 125 c www.freescale.net.cn 3/6 AON7820 20v dual n-channel mosfet
typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 25 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =10v i d =11a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i s (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =4 c/w www.freescale.net.cn 4/6 AON7820 20v dual n-channel mosfet
typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 current rating i s (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =75 c/w www.freescale.net.cn 5/6 AON7820 20v dual n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AON7820 20v dual n-channel mosfet
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